PubMed:21711673 JSONTXT

{"project":"LitCoin-PubTator-for-Tuning","denotations":[{"id":"2","span":{"begin":79,"end":86},"obj":"ChemicalEntity"},{"id":"3","span":{"begin":92,"end":107},"obj":"ChemicalEntity"},{"id":"15","span":{"begin":206,"end":213},"obj":"ChemicalEntity"},{"id":"16","span":{"begin":214,"end":218},"obj":"ChemicalEntity"},{"id":"17","span":{"begin":219,"end":232},"obj":"ChemicalEntity"},{"id":"18","span":{"begin":234,"end":238},"obj":"ChemicalEntity"},{"id":"19","span":{"begin":358,"end":360},"obj":"ChemicalEntity"},{"id":"20","span":{"begin":426,"end":428},"obj":"ChemicalEntity"},{"id":"21","span":{"begin":627,"end":629},"obj":"ChemicalEntity"},{"id":"22","span":{"begin":667,"end":674},"obj":"ChemicalEntity"},{"id":"23","span":{"begin":1185,"end":1221},"obj":"DiseaseOrPhenotypicFeature"},{"id":"24","span":{"begin":1285,"end":1293},"obj":"ChemicalEntity"},{"id":"25","span":{"begin":1294,"end":1306},"obj":"DiseaseOrPhenotypicFeature"}],"attributes":[{"id":"A2","pred":"tao:has_database_id","subj":"2","obj":"MESH:D012825"},{"id":"A3","pred":"tao:has_database_id","subj":"3","obj":"MESH:D012822"},{"id":"A15","pred":"tao:has_database_id","subj":"15","obj":"MESH:D012825"},{"id":"A17","pred":"tao:has_database_id","subj":"17","obj":"MESH:D012822"},{"id":"A19","pred":"tao:has_database_id","subj":"19","obj":"MESH:D012825"},{"id":"A20","pred":"tao:has_database_id","subj":"20","obj":"MESH:D012825"},{"id":"A21","pred":"tao:has_database_id","subj":"21","obj":"MESH:D012825"},{"id":"A22","pred":"tao:has_database_id","subj":"22","obj":"MESH:D012825"},{"id":"A23","pred":"tao:has_database_id","subj":"23","obj":"MESH:D001929"}],"text":"Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films.\nIn this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd3+ demonstrating the efficient energy transfer between Si-np and Nd3+ and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd3+ PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd3+."}

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{"project":"Allie","denotations":[{"id":"SS1_21711673_1_0","span":{"begin":160,"end":177},"obj":"expanded"},{"id":"SS2_21711673_1_0","span":{"begin":179,"end":181},"obj":"abbr"},{"id":"SS1_21711673_1_1","span":{"begin":206,"end":232},"obj":"expanded"},{"id":"SS2_21711673_1_1","span":{"begin":234,"end":238},"obj":"abbr"},{"id":"SS1_21711673_3_0","span":{"begin":493,"end":519},"obj":"expanded"},{"id":"SS2_21711673_3_0","span":{"begin":521,"end":525},"obj":"abbr"},{"id":"SS1_21711673_3_1","span":{"begin":667,"end":688},"obj":"expanded"},{"id":"SS2_21711673_3_1","span":{"begin":690,"end":695},"obj":"abbr"},{"id":"SS1_21711673_3_2","span":{"begin":765,"end":782},"obj":"expanded"},{"id":"SS2_21711673_3_2","span":{"begin":784,"end":787},"obj":"abbr"}],"relations":[{"id":"AE1_21711673_1_0","pred":"abbreviatedTo","subj":"SS1_21711673_1_0","obj":"SS2_21711673_1_0"},{"id":"AE1_21711673_1_1","pred":"abbreviatedTo","subj":"SS1_21711673_1_1","obj":"SS2_21711673_1_1"},{"id":"AE1_21711673_3_0","pred":"abbreviatedTo","subj":"SS1_21711673_3_0","obj":"SS2_21711673_3_0"},{"id":"AE1_21711673_3_1","pred":"abbreviatedTo","subj":"SS1_21711673_3_1","obj":"SS2_21711673_3_1"},{"id":"AE1_21711673_3_2","pred":"abbreviatedTo","subj":"SS1_21711673_3_2","obj":"SS2_21711673_3_2"}],"text":"Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films.\nIn this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd3+ demonstrating the efficient energy transfer between Si-np and Nd3+ and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd3+ PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd3+."}